Growth of zinc oxide nanostructures using chemical methods.

摘要

Zinc oxide is a group II--VI n-type semiconductor with a band gap of approximately 3.3--3.6 eV. The purpose of this research was to deposit and grow ZnO nanorod structures on suitable substrates. Two deposition methods, electrodeposition and wet chemistry, were investigated. In both methods, variables such as solution concentration, deposition time, temperature and substrate were changed so that the optimal recipe could be realized. Analysis was completed by using scanning electron microscopy (SEM) and symmetric x-ray diffraction (XRD) to determine the structure and morphology of the surface. Both deposition methods allowed for the growth of ZnO. Electrodeposition resulted in hexagonal ZnO platelet structures, ranging in 1000--3000 nm in diameter on Au substrates. Variation in growth times from 20--70 minutes did not effect growth; the potential -0.6V SCE resulted in poor growth, but potential ≥ -0.7V/SCE resulted in good growth. The growth appeared to be caused by the electric field concentration of the platelet's edges. Using wet chemistry, optimal growth was found on a Ag substrate, which produced ZnO nanorods approximately 200 nm in diameter and less than 1 mum in length growing along the (0001) plane.