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Electron impact ionization of trichlorosilyl, dichlorosilylene, and chlorosilylidyne.

机译:三氯甲硅烷基,二氯甲硅烷基和氯甲硅烷基的电子碰撞电离。

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摘要

Absolute cross sections for the formation of singly charged positive ions produced by electron impact on SiCl3, SiCl2 , and SiCl were measured using the fast-neutral-beam technique. The electron energy range covered was from the threshold to 200 eV. The parent ionization cross sections for all three radicals SiCl3, SiCl 2, and SiCl exhibit similar double-maximum structures which have been observed in other Cl-containing molecules. The largest partial ionization cross sections produced from electron impact on SiCl3 were the SiCl+ and Cl+ fragment ions with maximum values of 3.71A2 and 3.60A2, respectively. The largest partial ionization cross section produced from electron impact on both SiCl2 and SiCl was the Si+ fragment ion with maximum values of 4.80 A2 for SiCl2 and 3.25 A2 for SiCl. The experimentally determined total single ionization cross sections of SiCl3, SiCl2, and SiCl are compared with the results of calculated cross sections using the Deutsch-Mark (DM) formalism.
机译:使用快速中性束技术测量了通过电子撞击SiCl3,SiCl2和SiCl形成的单电荷正离子形成的绝对截面。涵盖的电子能量范围是从阈值到200 eV。所有三个自由基SiCl3,SiCl2和SiCl的母体电离截面均显示出相似的双最大结构,这在其他含Cl分子中也观察到。电子撞击SiCl3所产生的最大部分电离截面为SiCl +和Cl +碎片离子,其最大值分别为3.71A2和3.60A2。电子对SiCl2和SiCl的撞击产生的最大部分电离截面是Si +碎片离子,SiCl2的最大值为4.80 A2,SiCl的最大值为3.25 A2。使用Deutsch-Mark(DM)形式将实验确定的SiCl3,SiCl2和SiCl的总单电离截面与计算截面的结果进行比较。

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