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Analysis and design of high-speed A/D converters in silicon-germanium technology .

机译:硅锗技术中高速A / D转换器的分析与设计。

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摘要

Mixed-signal systems play a key role in modern communications and electronics. The quality of A/D and D/A conversions deeply affects what we see and what we hear in the real world video and radio. This dissertation deals with high-speed ADCs: a 5-bit 500-MSPS ADC and an 8-bit 2-GSPS ADC. These units can be applied in flat panel display, image enhancement and in high-speed data link. To achieve the state-of-the-art performance, we employed a 0.13-mum/2.5-V 210-GHz (unity-gain frequency) BiCMOS SiGe process for all the implementations. The circuit building blocks, such as the Track-and-Hold circuit (T/H) and the comparator, required by an ADC not only benefit from SiGe's superior ultra-high frequency properties but also by its power drive capability.;The T/H described here achieved a dynamic performance of 8-bit accuracy at 2-GHz Nyquist rate with an input full scale range of 1 Vp-p. The T/H consumed 13 mW of power. The unique 4-in/2-out comparator was made of fully differential emitter couple pairs in order to operate at such a high frequency. Cascaded cross-coupled amplifier core was employed to reduce Miller effect and to avoid collector-emitter breakdown of the HBTs. We utilized the comparator interpolation technique between the preamplifer stages and the latches to reduce the total power dissipated by the comparator array. In addition, we developed an innovative D/A conversion and analog subtraction approach necessary for two-step conversion by using a bipolar pre-distortion technique. This innovation enabled us to decrease the design complexity in the subranging process of a two-step ADC.;The 5-bit interpolating ADC operated at 2-GSPS achieved a differential nonlinearity (DNL) of 0.114 LSB and an integral nonlinearity (INL) of 0.076 LSB. The effective number of bits (ENOBs) are 4.3 bits at low frequency and 4.1 bits near Nyquist rate. The power dissipation was reduced more than half to 66.14 mW, with comparator interpolation. The 8-bit two-step interpolating ADC operated at 500-MSPS. It achieved a DNL of 0.33 LSB and an INL of 0.40 LSB with a power consumption of 172 mW. The ENOBs are 7.5 bits at low frequency and 6.9 bits near Nyquist rate.
机译:混合信号系统在现代通信和电子中起着关键作用。 A / D和D / A转换的质量会深刻影响我们在现实世界的视频和广播中看到的内容和听到的内容。本文涉及高速ADC:5位500-MSPS ADC和8位2GSPS ADC。这些单元可应用于平板显示器,图像增强和高速数据链路。为了实现最先进的性能,我们为所有实现采用了0.13微米/2.5-V 210 GHz(单位增益频率)BiCMOS SiGe工艺。 ADC所需的电路构建模块,例如跟踪和保持电路(T / H)和比较器,不仅得益于SiGe的超高超高频特性,而且还得益于其功率驱动能力。此处描述的H在2 GHz奈奎斯特速率下以1 Vp-p的输入满量程范围实现了8位精度的动态性能。 T / H消耗了13 mW的功率。独特的4进2出比较器由全差分发射极对对制成,以便在如此高的频率下工作。采用级联交叉耦合放大器内核来降低米勒效应并避免HBT的集电极-发射极击穿。我们利用前置放大器级和锁存器之间的比较器插值技术来减少比较器阵列所消耗的总功率。此外,我们还开发了一种创新的D / A转换和模拟减法,这是使用双极性预失真技术进行两步转换所必需的。这项创新使我们能够在两步ADC的细分过程中降低设计复杂性;以2-GSPS工作的5位插值ADC的差分非线性(DNL)为0.114 LSB,积分非线性(INL)为0.076 LSB。有效位数(ENOB)在低频时为4.3位,在奈奎斯特速率附近为4.1位。通过比较器插值,功耗降低了一半以上,降至66.14 mW。以500-MSPS工作的8位两步内插ADC。它的DNL为0.33 LSB,INL为0.40 LSB,功耗为172 mW。 ENOB在低频下为7.5位,在奈奎斯特速率附近为6.9位。

著录项

  • 作者

    Chen, Po-Hsin.;

  • 作者单位

    University of Maryland, College Park.;

  • 授予单位 University of Maryland, College Park.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 150 p.
  • 总页数 150
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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