声明
1. Introduction
1.1 Microelectronics Packaging Technology
1.1.1Development trend of microelectronic packaging technology
1.2Reliability Challenges of Electromigration for Micro Interconnections
1.2.1Physical Mechanism of Electromigration
1.2.2Effective Charge Number Z*
1.2.3Atomic Diffusion Flux J
1.3 Application of Synchrotron Radiation Imaging Technology in Microelectronic Packaging Research
1.4 Current Research Status of Electromigration of Micro Interconnection Solder Joints
1.5 Main Research Objectives of this Thesis
2. Experimental Materials and Methods
2.1 Experimental Materials
2.2 Sample preparation
2.3 Electromigration Experiment
2.4 Analysis and Characterization
2.4.1Microstructure Characterization and Data Analysis
3. Electromigration and Orientation Relationship Character of full IMC Interconnects
3.1 Introduction
3.1.2 Microstructure Cu/Sn/(001) Ni Interconnect
3.1.3Microstructure of Cu/Sn/(001) Cu Interconnect
3.2 Preparation of Full IMC Interconnects
3.3Effect of EM on the Interfacial reaction of interconnect
3.3.1In situ Imaging for (001)Ni/Sn/polycrystalline Cu interconnect
3.3.2Growth kinetics of (Cu, Ni)6Sn5 IMC
3.3.3In situ Imaging for (001) Cu/Sn/polycrystalline Cu interconnect
3.3.4Growth kinetics of Cu6Sn5 IMC
3.4The Growth Mechanism during L-S Electromigration.
3.5Effects of EM on the Orientation Relationship of the Interconnects
3.5.1Orientation Relationship Character of Cu/Sn/(001) Ni Interconnect
3.5.2Orientation Relationship Character of Cu/Sn/(001) Cu Interconnect
Conclusions
参考文献
致谢
大连理工大学;
