Chapter 1 Introduction and Background
1.1 Introduction
1.1.1 Motivation
1.1.2 Objectives
1.1.3Thesis Arrangement
1.2 Background and Significance
1.2.1 Wide Bandgap Materials
1.2.2Buffer LayersInsertionin the Heterojunctions and Their Influences on the Structural and Optical Properties
1.2.3Surface Modifications and Their Influences on the Properties
1.2.4Brief Introduction on the Photodetectors
1.3 Chapter Summary
Chapter 2 Fabrication Methods and Characterization Techniques
2.1 Introduction
2.2 Fabrication Methods
2.2.1RF Magnetron Sputtering
2.2.2 Hydrothermal Method
2.3 CharacterizationTechniques
2.3.1 X-ray Diffraction
2.3.2 Scanning Electron Microscope and Energy Dispersive X-ray
2.3.3 Transmission Electron Microscopy
2.3.4 Atomic Force Microscopy
2.3.5 Photoluminescence Spectroscopy
2.4 Chapter Summary
Chapter 3 Influences of Sputtering Conditions on AlN Film Properties
3.1 Introduction
3.1.1Prior Preparations
3.1.2Deposition Process of the AlN Films
3.2Fabrication and Properties of AlN Films Deposited by AlN Target
3.2.1 Deposition in Different Sputtering Powers
3.2.2 Deposition in Different Sputtering Pressures
3.2.3Deposition in Different Gases Flow Ratio (N2∶Ar)
3.2.4 Influence of Substrates Temperatures on the AlN Films
3.2.5 Influence of Post Annealing on the AlN Films
3.2.6 Influence of Two Stages Deposition on the AlN Film
3.3Fabrication and Properties of AlN Films Deposited By Al Target
3.4.1 Deposition in Different Sputtering Power
3.3.2Influence of the Sputtering Pressure on the AlN Films
3.3.3 Influence of Substrate and Post Annealing Temperatures on the AlN Films
3.4General Features of the AlN Films Deposited by Both AlN and Al Targets
3.5Chapter Summary
Chapter 4Fabricationand Properties of AlN/ZnO Nanorods Heterostructure
4.1Fabrication of ZnO Nanorods Arrays Growth on Si substrates
4.1.1 Description of the ZnO Seed Layer Deposition
4.1.2 Influence of the ZnO Seed Layer on the Quality of ZnO NRs Growth
4.1.3Influence of Post Annealing on Optical Properties of ZnO NRs with Seed Layers
4.2Fabrication and Properties of ZnO NRs/AlN/Si Heterostructure
4.2.1 Insertion of the AlN Buffer Layerin the ZnO NRs/Si Heterojunction
4.2.2Influence of AlN Buffer Layers on Properties of ZnO NRs/Si Heterojunction
4.3Influence of AlN Capping Layers on Properties of ZnO NRs/Si Heterojunction
4.3.1Fabrication of the AlN/ZnO NRs Arrays Heterostructure
4.3.2Structure and Morphology Characterization
4.3.3Influence of the AlN Capping Layer on Optical Properties of ZnO NRs/Si Heterojuncton
4.4 Chapter Summary
Chapter 5 Performance of Photodetectors Based on AlN/ZnO Nanorods Heterostructure
5.1 Introduction
5.2Fabrication of the UV Photodetectors
5.3Influence of AlN layers on the performance of UV Photodetectors
5.4 Chapter Summary
Conclusions
Innovation
Prospects
参考文献
Papers Published in the Period of Ph.D. Education
声明
致谢
Resume
