ZnO Ultraviolet Photodetector based Metal-Semiconductor-Metal Structure

摘要

The metal-semiconductor-metal (MSM) structured ZnO photodetectors with same electrode spacings are made by radio frequency magnetron sputtering. A study of the thermal annealing effects on photodetectors with sequential annealing temperature (300, 400, 500 and 600 ℃).The responsivity of the photodetector was enlarged greatly after annealing the MSM device. Meanwhile, the enhancement in the dark current that resulted from the experiment was accompanied by the increasing annealing temperature. These results demonstrate that a simple route to improve the responsivities of photodetectors can be realized easily by annealing the devices.