Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells

摘要

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found on the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the hole because of Fermi-level pinning effect. In this contribution, low temperature deposited, dopant-free chromium trioxide (CrO