Atmospheric Pressure Spatial ALD Layer for Ambient, Thermally and Light Stable p-i-n Planar Perovskite Solar Cells

摘要

In order to bring the organo-lead halide perovskite solar cells (PSC) towards the commercialization, the device stability needs to be drastically improved. Our approach relies on the introduction of a compact metal oxide (MeO) layer in a p-i-n planar architecture by means of atmospheric pressure spatial atomic layer deposition (s-ALD) technique. The presence of this additional layer improves the stability towards the ambient environment as well as during a thermal stress test carried out at 85 °C. Furthermore, we observe that replacing the top metal contact with a sputtered ITO electrode can prolong the device stability both under thermal and light soaking tests.