Determining the spatial profiles of electron and hole concentration, radiative and non-radiative recombination rate near a dislocation defect by combining Raman and photoluminescence imaging

摘要

For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the carrier diffusion length rather than by that dictated by the optical system, such as diffraction limit. Here, we show that Raman imaging of the LO phonon-plasmon (LOPP) coupled mode can be used to recover the intrinsic spatial resolution of the optical system, as demonstrated by Raman imaging of defects in GaAs, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently determine the spatial profiles of the electron and hole density, radiative and non-radiative recombination rate near a dislocation defect, which has not been possible using other techniques.