InN has been grown in a gas-source MBE system using an RF nitrogen plasma source and standard TMI, solution TMI and solid In. Both solid and solution TMI produce InN with electron and carbon concentrations >=10~(20) cm~(-3). Solution TMI-derived material, however, contains significantly less oxygen (8x10~(18) cm~(-3) vs.>=10~(20) cm~(-3) for solid TMI)> While the amine used to liquefy the TMI helps to displace the ether believed to be responsible for the oxygen contamination, it also appears to interfere with the growth, resulting in poorer morphology than for standard TMI. While solid In produced the lowest carrier concentration(<=mid-10~918)cm~(-3), it also produced the worst morphology of the sources examined, presumably due to poor surface mobility. Based on this data, it appears that carbon cna play a significant role in the electrical properties of InN, and that the In source is critical in determining the structural quality.
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