Interfacial diffusion/reaction and electrical properties of Pd ultrathin film on SiC at different annealing temperatures

机译：不同退火温度下SiC上Pd超薄膜的界面扩散/反应及电性能

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Pd/SiC has been used as a high temperature hydrocarbon and hydrogen gas sensor in environmental and aeronautical applications. In this work, the relationships between diffusion, reaction, and interfacial chemical composition with electrical properties for Pd ultra-thin films on 6H-SiC (-<30 A) are studied at different annealing temperatures.

机译：Pd / SiC已在环境和航空应用中用作高温烃和氢气传感器。在这项工作中，研究了在不同退火温度下6H-SiC（-<30 A）上Pd超薄膜的扩散，反应和界面化学组成与电性能之间的关系。

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来源
《Wide-Bandgap semiconductors for high power, high frequency and high temperature》|1998年|p.339-344|共6页
会议地点 San Francisco CA(US)
作者
W.Lu; D.T.Shi; W.E.Collins; H.Chen; A.Burger;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Pd thin film; SiC, X-ray photoelectron spectroscopy; scanning tunneling microscopy and atomic force microscopy;

机译：钯薄膜; SiC，X射线光电子能谱；扫描隧道显微镜和原子力显微镜;

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机译：在不同温度下6H-SiC上的空气退火钌薄膜结构和电性能的研究
2. Effects of defects generated in ALD TiO2 films on electrical properties and interfacial reaction in TiO2/SiO2/Si system upon annealing in vacuum [J] . Sanghee Won, Seunghee Go, Wonhee Lee, Metals and Materials International . 2008,第6期

机译：真空退火条件下ALD TiO2 薄膜中产生的缺陷对TiO2 / SiO2 / Si体系电性能和界面反应的影响
3. Effects of Defects Generated in ALD TiO_2 Films on Electrical Properties and Interfacial Reaction in TiO_2/SiO_2/Si System upon Annealing in Vacuum [J] . Sanghee Won, Seunghee Go, Wonhee Lee Metals and Materials International . 2008,第6期

机译：真空退火条件下ALD TiO_2薄膜缺陷对TiO_2 / SiO_2 / Si体系电性能和界面反应的影响
4. Interfacial diffusion/reaction and electrical properties of Pd ultrathin film on SiC at different annealing temperatures [C] . W.Lu, D.T.Shi, W.E.Collins, Symposium on wide-Bandgap semiconductors for high power, high frequency and high temperature . 1998

机译：不同退火温度下SiC的Pd超薄膜的界面扩散/反应和电性能
5. Electrical transport in ultrathin films of a-bismuth at low temperatures and high magnetic fields near the superconductor -insulator transition. [D] . Hernandez, Luis Manuel. 2002

机译：在超导体-绝缘体转变附近的低温和高磁场下，a铋超薄膜的电传输。
6. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness [O] . Ye Kyun Kim, Cheol Hyoun Ahn, Myeong Gu Yun, -1

机译：具有高性能和超薄厚度的低温可加工非晶InGaZnO薄膜晶体管的周期性脉冲湿退火方法
7. Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation [O] . Skuratov, V.A., Wamwangi, D., Comrie, C.M., 2016

机译：热退火和sHI辐照对pd薄膜与siC的界面反应

Interfacial diffusion/reaction and electrical properties of Pd ultrathin film on SiC at different annealing temperatures

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