GaN MIS-HEMT with Low Dynamic ON-resistance Using SiON Passivation

摘要

An effective SiON passivation with high density of positive fixed charges for GaN MIS-HEMTs is demonstrated. The positive fixed charges at the SiON/AlGaN interface effectively reduce the surface potential and expand the quantum well below the Fermi level, thus improving the device performance. The GaN MIS-HEMT with SiON demonstrated a high maximum drain-source current density (I_(DS,max)) of＞1 A/mm, a breakdown voltage of 750 V at a drain leakage current of 1 μA/mm, and a well transfer characteristics. The dynamic ON-resistance only increased slightly under a high quiescent bias of 100 V.