Department of Mechanical Engineering, Materials Engineering Program, and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204-4006, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA;
Department of Mechanical Engineering, Materials Engineering Program, and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204-4006, USA;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215125, China;
Division of Advanced Materials Engineering and Research Center of Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756, Korea;
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Department of Photonic Engineering, Chosun University, Seosuk-dong, Gwangju 501-759, Korea;
Woodruff school of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405, USA;
Woodruff school of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405, USA;
Woodruff school of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405, USA;
机译：GaN基多量子阱发光二极管中内部量子效率和载流子浓度的阱厚度依赖性
机译：使用时间分辨电致发光的不同缺陷密度的GaN基发光二极管效率下垂的载体动力学分析
机译：通过双Al组成梯度最后量子屏障和P型孔供应层增加GaN基紫外发光二极管的载流子注入效率
机译：载体动力学和光子管理，提高GaN基可见光二极管量子效率
机译：改进了III族氮化物可见光和紫外发光二极管的性能，包括提取效率，电效率，热管理和高电流密度下的效率维持。
机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译：GaN基高压发光二极管的效率和下垂改善
