Effect of growth parameters on stress in HVPE GaN films

摘要

The effect of growth parameters on stress in thick GaN films grown on sapphire by HVPE method was investigated. We have found two modes of growth with different growth stress. Films grown in one mode have rough surfaces and low stress. The second mode leads to smooth surfaces but the films contain many cracks due to high growth stress. A combination of these modes allows growth of films without cracks and with smooth surfaces.