Department of Chemical and Energy Engineering, Yokohama National University, Hodogaya, Yokohama, Kanagawa 240-8501, Japan;
Department of Chemical and Energy Engineering, Yokohama National University, Hodogaya, Yokohama, Kanagawa 240-8501, Japan;
Department of Chemical and Energy Engineering, Yokohama National University, Hodogaya, Yokohama, Kanagawa 240-8501, Japan;
Department of Chemical and Energy Engineering, Yokohama National University, Hodogaya, Yokohama, Kanagawa 240-8501, Japan;
Shibukawa Research Laboratory, Kanto Denka Kogyo Co., Ltd., Shibukawa Gunma 377-8513, Japan;
Shibukawa Research Laboratory, Kanto Denka Kogyo Co., Ltd., Shibukawa Gunma 377-8513, Japan;
Energy Semiconductor Electronics Research Laboratory, National Institutes of Advanced Science and Technology, Tsukuba, Ibaraki 305-8568,Japan;
机译:用于单晶C面4H型碳化硅晶片蚀刻器的三氟化氯气分配器设计
机译:三氟化氯气体蚀刻后的4H-碳化硅晶片表面
机译:三氟化氯气体对4H-碳化硅外延膜的刻蚀速率行为
机译:使用氯三氟化气体形成的4H-碳化硅表面的蚀刻凹坑
机译:表征氢蚀刻和/或清洁的氢-6-碳化硅(0001)表面上氮化铝和氮化镓薄膜的生长。
机译:GaAsBi分子束外延过程中形成的气液固驱动Bi表面液滴的表面效应
机译:使用三氟化氯气体蚀刻碳化硅
机译:电感耦合等离子体(ICp)干蚀刻中三氯化硼/氯气体分子外延生长p型氮化铝镓的刻蚀特性及表面分析