Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

摘要

Staggered tunnel junction (GaAs0.35Sb0.65/In0.7Ga0.3As) is used to demonstrate heterojunction tunnel FET (TFET) with the highest drive current, Ion, of 135µA/µm and highest Ion/Ioff ratio of 2.7×10⁴ (Vds=0.5V, Von−Voff=1.5V). Effective oxide thickness (EOT) scaling (using Al2O3/HfO2 bilayer gate stack) coupled with pulsed I–V measurements (suppressing Dit response) enable demonstration of steeper switching TFET.