Concepts for Long Wavelength VCSELs above 2μm

摘要

We present different concepts for long wavelength buried tunnel junction VCSELs for the spectroscopically important range above 2 μm. This includes GaSb-based laser using GaInAsSb quantum wells, InP-based lasers with V-shaped quantum wells and InP-based lasers using type-Ⅱ quantum wells. For InP-based devices, emission wavelengths up to 2.36 μm are presented, with single-mode output powers of roughly 500 μW and side-mode suppression ratios of more than 30 dB. GaSb-based VCSELs are presented with single-mode emission at 2.6 μm, a side-mode suppression ratio of more than 20 dB and a peak output power of 400 μW.