A novel structure for improvment the Ion/Ioff ratio in nano-scale double gate source-heterojunction-MOS-transistor

摘要

In this paper, we introduce a novel double gate SHOT which provides at least the drain current twice higher than that of the conventional SHOT structure. Improved characteristics are originated from the high velocity electron injection at the source edge due to the band offset energy. The analysis of the off-state current characteristics shows that provided 89% reduction in off-stat current. Based on this analysis, we proposed use of work function engineering as well as extra grounded gate to minimize the magnitude of GIDL current which is the main component of the off-state current.