Design of a 110GHz GaN Schottky Diode Frequency Tripler

摘要

In this paper, a 110GHz GaN Schottky diode frequency tripler is presented. The GaN Schottky diodes and the whole circuit are on Rogers/RT5880 and the thickness is 0.127m. The circuit design, simulation and optimization of the frequency tripler are carried out by using HFSS and ADS. The simulation result shows the efficiency of the tripler can achieve at least 7% in 110GHz and the outpower can achieve 100mW.