ACHIEVEMENT OF HIGH FLATNESS OF LARGE DIAMETER SILICON WAFER IN DOUBLE-SIDED POLISHING: OPTIMIZATION OF POLISHING CONDITIONS BASED ON KINEMATICAL ANALYSIS

摘要

The optimization of double-sided polishing conditions was proposed based on kinematical analysis for achieving high flat large diameter wafer. And it was found that:rn(1) In the case of the optimization for only wafer, the distribution variation of the sliding distance on wafer was small, but the difference of the sliding distance on the upper pad and that on the lower pad was very large.rn(2) In the case of the optimization for wafer, and upper and lower pads, the distribution variation of sliding distance on wafer was improved, and the difference of sliding distance on the upper pad and that on the lower pad was suppressed.rn(3) Optimization of workpiece-hole location in carrier in addition to polishing conditions, namely, the rotation of gears and pads improved the flatness of wafer and pads.