Impact of planar transformer winding capacitance on Si-based and GaN-based LLC resonant converter

摘要

Transformer loss, comprised of core loss and winding loss, is a critical part in the LLC resonant converter loss. Different winding structures lead to different winding losses and winding capacitances. High winding capacitance will impact the design of the LLC resonant converter. The reason is that high winding capacitance means high winding charge, which must be moved during the dead time to realize the device zero voltage turn-on. As a result, the dead time and magnetizing current will be changed, and the converter loss will be changed as well. This paper first discusses the transformer loss including core loss and winding loss. Then, four different winding structures are analyzed based on a selected core, which show the decrease of AC resistance and the increase of winding capacitance. After that, the winding capacitance model is discussed generally. Finally, the impact of winding capacitance on the design and performance of LLC resonant converter is studied. Two 48 V–12 V, 300 W Si-based and GaN-based LLC resonant converters are designed as platforms to evaluate the impact of winding capacitance. The results indicate that the GaN-based converter is well suited to the transformer with lowest winding loss but highest winding capacitance, since the GaN device's output capacitance is much lower than that of the Si device.