Cu CMP Property by Addition of Corrosion Inhibitor and Complexing Agent

摘要

Recently, copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. In this study, Cu CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA), were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H_2O_2 2 wt% in the slurry, the corrosion rate was presented very well. Most of all, it was appeared that BTA is possible to be replaced by TTA. The tartaric acid was distinguished for the effect among complexing agents. If we apply these results to copper CMP process, it is thought that we will be able to obtain better yield.