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MOCVD of rhenium-containing complex oxides with the new thd-precursor

机译:新型th前驱体对含rh复合氧化物的MOCVD

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Complex oxides containing rhenium, for instance, magnetoresistive double perovskites and Re-stabilised Hg high T_c superconductors, attract a significant attention. We developed a volatile rhenium compound compatible with the thd-complexes of metals by reaction of the product of the metal electrolysis with 2,2,6,6-tetramethylheptan-3,5-dion at the elevated temperature. The details of crystal structure of the compound are discussed. The blocks [ReO(thd)_2](ReO_4) form layered molecular structure. The compound was used in the single source MOCVD together with thd-complexes of different metals (Ba, La, Ho) producing films of the double oxides. The Re-stabilised Re_x(Ba,Sr)_2Ca_2Cu_3O_y (x=0.1-0.3) precursor films with high composition homogeneity and surface smoothness were deposited to be saturated with Hg under the high pressure.
机译:含rh的复杂氧化物,例如磁阻双钙钛矿和重新稳定的Hg高T_c超导体,引起了人们的极大关注。我们通过在高温下将金属电解产物与2,2,6,6-四甲基庚烷-3,5-dion反应,开发了与金属thd络合物相容的挥发性rh化合物。讨论了该化合物的晶体结构的细节。嵌段[ReO(thd)_2](ReO_4)形成层状分子结构。该化合物与不同金属(Ba,La,Ho)的thd络合物一起用于单源MOCVD,产生双氧化物膜。具有高组成均质性和表面光滑度的重新稳定化的Re_x(Ba,Sr)_2Ca_2Cu_3O_y(x = 0.1-0.3)前体膜在高压下沉积为Hg饱和。

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