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MOCVD of rhenium-containing complex oxides with the new thd-precursor

机译:含铼的复合氧化物的MOCVD与新的THD-前体

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Complex oxides containing rhenium, for instance, magnetoresistive double perovskites and Re-stabilised Hg high T_c superconductors, attract a significant attention. We developed a volatile rhenium compound compatible with the thd-complexes of metals by reaction of the product of the metal electrolysis with 2,2,6,6-tetramethylheptan-3,5-dion at the elevated temperature. The details of crystal structure of the compound are discussed. The blocks [ReO(thd)_2](ReO_4) form layered molecular structure. The compound was used in the single source MOCVD together with thd-complexes of different metals (Ba, La, Ho) producing films of the double oxides. The Re-stabilised Re_x(Ba,Sr)_2Ca_2Cu_3O_y (x=0.1-0.3) precursor films with high composition homogeneity and surface smoothness were deposited to be saturated with Hg under the high pressure.
机译:含有铼的复合氧化物,例如磁阻双钙钛矿和重新稳定的HG高T_C超导体,吸引了显着的关注。通过在升高温度下,通过金属电解产物与2,2,6,6-四甲基庚烷-3,5℃的反应,开发了一种挥发性铼化合物与金属的THD-复合物相容。讨论了化合物的晶体结构细节。块[REO(THD)_2](REO_4)形成层状分子结构。将该化合物与单源MOCVD一起使用,与不同金属(BA,LA,HO)的THD-复合物一起生产双氧化物的薄膜。具有高组合物均匀性和表面平滑度的重新稳定的RE_X(BA,SR)_2CA_2CU_3O_Y(X = 0.1-0.3)前体膜沉积在高压下用Hg饱和。

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