Research on nitride semiconductors has been greatly pushed during the last decade due to their unique properties, promoting new and improved applications either in high power electronic (amplifiers, filters) and visible-UV optoelectronics (lasers, LED's, detectors) [1]. Notweorthy, UV photodetectors are required in a number of fields, including UV astronomy, satellite communications, detection of missile plumes, engine control, flame sensors, emitters calibration and instrumentation, and environment (pollution) and climate (ozone, solar monitoring) research. Each application demands specific performances, although a high responsivity, linearity, spectral selectivity, large broadband (fast response) and low noise are desirable [2].
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