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Relation between oxygen precipitation and carrier recombination lefetime in Cz-Si crystal

机译:Cz-Si晶体中氧沉淀与载流子复合迁移时间的关系

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摘要

The relationship between triangle openOi and carrier recombination lifetime (CRT) is interpreted. A simple model for BMD formation is suggested and a relation between triangle openOi and CRT is be obtained from the relation between triangle openOi and BMD density. When triangle openOi is larger than about 1 ppma, r=K_3[BMD]~(0.087). This means that the size of BMD decreases very slightly along with the increase in its density. For triangle openOi smaller than about 1 ppma, it can be considered that both density and size of BMD are too small to affect the CRT. Effects of repeated heat treatments on the triangle openOi and on the CRT are also discussed.
机译:解释了三角形openOi与载流子复合寿命(CRT)之间的关系。提出了一个简单的BMD形成模型,并从三角形openOi与BMD密度之间的关系中获得了三角形openOi与CRT之间的关系。当三角形openOi大于约1ppma时,r = K_3 [BMD]〜(0.087)。这意味着BMD的大小随其密度的增加而略微减小。对于小于约1 ppma的三角形openOi,可以认为BMD的密度和大小都太小而无法影响CRT。还讨论了重复热处理对三角形openOi和CRT的影响。

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