首页> 外文会议>Third International Symposium on Chemical Mechanical Planarization(CMP) in Integrated Circuit(IC) Device Manufacturing, 3rd, Oct 20-22, 1999, Honolulu, Hawaii >MECHANISTIC STUDY OF DIELECTRIC CHEMICAL MECHANICAL POLISHING BY SPECTRAL AND SCALING ANALYSIS OF ATOMIC FORCE MICROSCOPE IMAGES
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MECHANISTIC STUDY OF DIELECTRIC CHEMICAL MECHANICAL POLISHING BY SPECTRAL AND SCALING ANALYSIS OF ATOMIC FORCE MICROSCOPE IMAGES

机译:原子力显微图像的光谱和标度分析研究机电化学抛光的机理。

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摘要

Thermal oxide and PETEOS oxide surfaces, polished on an IPEC 472 with different combinations of polish pad, slurry, and polishing conditions, were studied with ex situ atomic force microscopy. The post polish surfaces were analyzed qualitatively by visual inspection and quantitatively by spectral and scaling analyses. Spectral and scaling analyses gave consistent interpretations of morphology evolution. Polishing with either a fixed abrasive pad or alumina-based slurry occurred via a mechanism for which asperities are removed and recesses are filled. A sputtering-type mechanism may have contributed to material removal when polishing with silica- or ceria-based slurries.
机译:用异位原子力显微镜研究了在IPEC 472上用不同的抛光垫,浆料和抛光条件组合抛光的热氧化物和PETEOS氧化物表面。通过视觉检查定性分析抛光后的表面,并通过光谱和定标分析定量地分析。频谱和缩放比例分析对形态演变给出了一致的解释。用固定的研磨垫或氧化铝基浆料进行抛光是通过去除凹凸并填充凹槽的机制进行的。当使用基于二氧化硅或二氧化铈的浆液进行抛光时,溅射型机理可能有助于去除材料。

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