Reliability Analysis of Single Grain Si TFTs using 2D Simulation

摘要

Single grain thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by u-Czochralski process have as high as SOI performance despite low-temperature process. Reliability of SG-TFTs is a very important issue. The degradation effects of SG-TFTs under bias-stress conditions are mostly mobility degradation, threshold voltage changing, subthreshold characteristic degradation. These effects need to be modeled in order to predict the reliability for any bias-stress conditions applied to the device. To obtain that, extraction parameters strategy of degradation model has to be found out. The degradation model is thus confirmed for different bias-stress conditions.