Formation of Location-Controlled Germanium Grains by Excimer Laser

摘要

2D location control of germanium (Ge) grains at different process temperature is obtained using the μ-Czochralski technology. Single Ge grains can reach diameter of 5 or even 8 μm at sputtering temperatures of 100 or 550 ℃, respectively. Crystalline structure of single Ge grain is confirmed by electron backscattering diffraction.