Flexible High Mobility Pentacene Transistor with High-k/Iow-k Double Polymer Dielectric Layer Operating at -5 V

摘要

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31～34 and 27 nF/cm~2 with k = ～ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm~2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 10~3, stably operating under -5 V.