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Gallium phosphide protective infrared films on zinc sulphide deposited by RF-planar magnetron sputtering

机译:射频平面磁控溅射在硫化锌上的磷化镓保护红外膜

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GaP thin film has proved to be effectively protective coating for zinc sulphide long-wave infrared (8-11.5 μm) window or dome from sand abrasion and raindrop erosion. The GaP films are deposited on thermo-pressed 5-mm-thick planar ZnS substrates of 20 mm in diameter by RF-planar magnetron sputtering in high pure argon gas, with a single crystalline GaP disc of 50 mm in diameter as the target. Following parameters vary from experiment to experiment with others kept unchanged: input RF powers are increased from 30 W to 100 W as feeding gas flows and gas pressures in the vacuum chamber are decreased simultaneously, with the intensity of the 750-nm-wavelength ray of argon's OES observed through a CCD multichannel spectrometer in glow discharges remaining almost the same. Thus different sets of deposition parameters are gained. Within these sets of parameters, the deposition rates and the degree of crystallization of the films increase with the input RF power increasing, as the IR transmission performances are as good, and thus thick GaP films with little absorption are achieved. SEM analyses show that the GaP films are compact and glazed
机译:事实证明,GaP薄膜是硫化锌长波红外窗(8-11.5μm)窗户或穹顶免受沙粒磨蚀和雨滴侵蚀的有效保护涂层。通过RF平面磁控管溅射在高纯氩气中,将GaP膜沉积在直径20 mm的热压5mm厚的平面ZnS基板上,以直径为50 mm的单晶GaP盘为目标。以下参数因实验而异,其他参数保持不变:输入射频功率从30 W增加到100 W,这是因为进料气流和真空室中的气压同时降低,而750 nm波长的射线强度通过CCD多通道光谱仪观察到的氩气的OES几乎保持不变。因此获得了不同组的沉积参数。在这些参数组中,随着输入射频功率的增加,薄膜的沉积速率和薄膜的结晶度会随着IR传输性能的提高而增加,从而获得具有很少吸收的厚GaP薄膜。 SEM分析表明GaP膜致密且光滑

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