Preparation and characterization of chemically deposited SnS thin films

摘要

Tin Sulphide is a promising material for use in solar cell with its suitable band gap energy and high absorption coefficient. In this paper, we prepared thin films of SnS by chemical bath deposition and annealed them at 300℃ in N_2 atmosphere. The SnS thin films were characterized structurally, optically and electrically. XRD shows the as-prepared film had orthorhombic crystal structure, exhibited Sn-rich composition and partially transformed to SnO_(2-x) by thermal treatment. The absorption was found to be as high as 10~5cm~(-1) for the photon energy above 1.55eV and the optical band gap was estimated to be 1.45eV from the transmittance spectra. The dark-and photo-conductivity were also calculated from the Ⅰ-Ⅴ curves of the as-prepared and thermal-treated firms.