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HUMIDITY SENSING PROPERTIES OF A MODIFIED FET STRUCTURE WITH TiO_2 AND WO_3 GATE LAYERS

机译:TiO_2和WO_3门控层修饰FET结构的湿敏特性。

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摘要

The humidity sensitivity of TiO_2 and WO_3 layers, and of a modified FET structure with a TiO_2, or WO_3 gate, has been investigated. Good sensitivity was observed in the two types of structure investigated. Both TiO_2 layers and TiO_2-gate FETs were sensitive to moisture, with the FET's advantage being the higher inversion channel current, 2-3 orders of magnitude higher than the current through the TiO_2 layers. WO_3 films and FETs with WO_3 sensing layers showed lower humidity sensitivities. Low resistance WO_3 layers were practically insensitive to moisture, but FETs with low resistance WO_3 gates showed good linear sensitivity. High resistance WO_3 films were more sensitive than the low resistance ones, but FETs with high resistance WO_3 gates showed no sensitivity to moisture.
机译:已经研究了TiO_2和WO_3层以及具有TiO_2或WO_3栅极的改良FET结构的湿度敏感性。在所研究的两种类型的结构中均观察到良好的灵敏度。 TiO_2层和TiO_2栅FET都对湿气敏感,FET的优势是更高的反向沟道电流,比流过TiO_2层的电流高2-3个数量级。具有WO_3感应层的WO_3薄膜和FET表现出较低的湿度敏感性。低电阻WO_3层实际上对湿气不敏感,但是具有低电阻WO_3栅极的FET显示出良好的线性灵敏度。高电阻WO_3膜比低电阻膜更敏感,但是具有高电阻WO_3栅极的FET对湿气不敏感。

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  • 会议地点 Varna(BG);Varna(BG)
  • 作者单位

    Institute of Solid State Physics, Bulg. Acad. of Sciences, Blvd. Tzarigradsko Chaussee 72, Sofia -1784, Bulgaria;

    Institute of Solid State Physics, Bulg. Acad. of Sciences, Blvd. Tzarigradsko Chaussee 72, Sofia -1784, Bulgaria;

    Institute of Solid State Physics, Bulg. Acad. of Sciences, Blvd. Tzarigradsko Chaussee 72, Sofia -1784, Bulgaria;

    Institute of Solid State Physics, Bulg. Acad. of Sciences, Blvd. Tzarigradsko Chaussee 72, Sofia -1784, Bulgaria;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 薄膜技术;
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