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Detection of Sixfold Co-ordinated Si at Grain Boundaries of Sintered α-Al_2O_3

机译:烧结α-Al_2O_3晶界上六重配位硅的检测

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摘要

High-resolution transmission electron microscopy and analytical electron microscopy have been carried out on Si-doped sintered α-Al_2O_3. High-Resolution Transmission Electron Microscopy (HRTEM) shows that there is no amorphous phase at grain boundaries. Si was found significantly segregated at grain boundaries, electron microscopy with Electron Energy Loss Spectroscopy (EELS) reveals the existence of sixfold co-ordinated Si at the grain boundaries for the first time. The results of theoretical calculations, by molecular orbital method, support the one obtained by electron energy loss spectroscopy.
机译:在掺Si的烧结α-Al_2O_3上进行了高分辨率的透射电子显微镜和分析电子显微镜。高分辨率透射电子显微镜(HRTEM)显示在晶界处没有非晶相。 Si被发现在晶界处明显偏析,电子显微镜和电子能量损失谱(EELS)首次揭示了在晶界处存在六重配位的Si。通过分子轨道方法进行的理论计算结果支持了通过电子能量损失光谱法获得的结果。

著录项

  • 来源
    《The electron 》|1997年|404-410|共7页
  • 会议地点 Cambridge(GB)
  • 作者

    K. Kaneko; I. Tanaka;

  • 作者单位

    Japan Science and Technology Corporation (JST), c/o Japan Fine Ceramics Centre, Atsuta, Nagoya 456, Japan;

    Department of Materials Science Engineering, Kyoto University, Sakyo, Kyoto, 606-01 Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 真空电子学(电子物理学) ;
  • 关键词

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