MBE GaN grown on (101) NdGaO_3 substrates

摘要

We investigate the structure, morphology and optical properties of gallium nitride (GaN) films deposited on (101) neodium gallate (NdGaO) substrates by molecular beam epitaxy. Scanning electron microscopy, X-ray diffraction, photoluminescence and capacity-voltage measurements are used for the films characterization. Comparison of the GaN/NdGaO_3 layer properties with those of GaN films grown on (0001) sapphire substrates has revealed the higher luminescence efficiency of the former.