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Transparent Conductive Tin Doped Indium Oxide Thin Films with Silver Additive

机译:含银添加剂的透明导电锡掺杂氧化铟薄膜

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Thin films of intermixed layers of In_2O_3:Sn (denoted ITO) and silver were made by reactive dc magnetron sputtering. The silver to indium atomic ratio was 0 ≤ x ≤ 0.09. Films with x = 0.01 showed increased luminous transmittance T_(lum) after annealing at 100 or 200℃, whereas x > 0.01 yielded lowered T_(lum). The optical properties could be reconciled with the Maxwell-Garnett effective medium theory assuming that a well-defined portion of the silver was occluded as spheroidal particles. Films with x ≤ 0.06 had enhanced electrical conductivity after annealing at 200 or 300℃. Transmission electron microscopy displayed columnar features whose character depended on x.
机译:In_2O_3:Sn(表示为ITO)和银的混合层的薄膜是通过反应性直流磁控溅射制备的。银与铟的原子比为0≤x≤0.09。 x = 0.01的薄膜在100或200℃退火后显示出更高的透光率T_(lum),而x> 0.01的薄膜则降低了T_(lum)。假设银的一个明确定义的部分作为球状颗粒被吸附,则光学性质可以与麦克斯韦-加纳特有效介质理论相协调。 x≤0.06的薄膜在200或300℃退火后具有增强的电导率。透射电子显微镜显示柱状特征,其特征取决于x。

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