Metalorganic chemical vapour deposition of CuInSe_2 from coooer and indium diselenocarbamates for solar cell devices

摘要

Thin films(s) of chalcopyrite (CuInSe_2 have been trown by low-pressure metal-ortganic chemical vapour deposition (LP-MOCVD) using the precursors In(Se_2CNME~nHexyl)_3 and precursors Cu(Se_2CNM3~nHexyl)_2. SThe precursors were prepared from carbon diselenide. Films were grown on glass between 400-450 deg C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.