The dielectric beakdown is an irreversible and transient processk and it is difficult to understand its dynamic characteristics. We notice that the post-breakdown electrical properties of silicon dioxide films may included much information on the dielectric breakdown mechanism. First, the resistance of silicon disocide films after the dielectric breakdown is statistically investigated, and then this analysis is applied to differentiate the hard-from the soft-breakdown. In particular, we discuss the critical dependence of the boundary between the hard-and soft-breakdown on the discharging time constant as well as the discharging energy at the breakdown, concerning the formation of the conduvtive filament in the insulator silicon dioxide films. It should be noted that the ratio of the slft-to the hard-breakdown changes in terms of tghe statistical distributiion in the case that the growth parameters and the measurement conditions are changed. In partcular, the external inductance effect to m odify the discharning time constant in the MOS circuit is discussed. The tnickness limitation of the silcon dioxide film in the roadmap is in this transition region, and this fact will be of essential importance in the assessment of the reliability and the process control of silicon device fabriation in sub-5nm silicon dioxide regime.
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