Analysis of MOS device capacitance-voltage characteristics based on the self-consikstent solution of the schrodinger and poisson equations

摘要

The one-dimensilonal Schromdinger and Poission equations have been numberically solved in metal-oxide-semiconductor devices using a three-point finite difference scheme with a non-uniform meash size. The capacitance-voltage characteristic of the structure has been calculated via this self-consistent approach and results have been compared with data obtained from the resolutioin of Possion equation using different approximated methods based on the Boltzmann statistic with and without a first order quantum effect correctiion or the exact Fermi-Dierac statistic. The present work permits to evaluate and quantify the errors made by these approximations in determining the thickness of ultra-thin oxides.