Remote true temperature pyrometry of Si wafers: theoretical and practical considerations

摘要

The problems of real thermodynamic temperature measurement in semiconductor processing can be idvided into fundamental and environmental. The first type arises from a-priori unknown and in process changing optical properties (emissivity) of the target wafer. Others have to do with the need to eliminate direct and indirect stray heat flux from entering into the sensor. We describe the advantages and pitfalls of various (passive and active) remote measurement methods. Experimental results of a novel emissvity independent technique for real time measurement in the range of 450-850 deg C with accuracy better than 1percent for wafer emissivity in the range of 0.2 to 0.95 are given.