Computationally efficient model for 2D ion implantation simulation

机译：二维离子注入仿真的计算有效模型

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A computationally efficient method for ion implantation simulation is presented. The method allows two-dimensional ion implantation profiles in arbitrary shaped structures to be calculated and is valid for both amorphous and crystalline materials. It uses an extension of the one-dimensional dual Pearson approximation into the second dimension.

机译：提出了一种有效的离子注入仿真方法。该方法允许计算任意形状结构中的二维离子注入轮廓，并且对于非晶材料和晶体材料均有效。它使用了一维对偶皮尔逊近似的扩展到第二维。

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《Symposium on Semiconductor Process and Device Performance Modelling held December 2-3, 1997, Boston, Massachusetts, U.S.A.》|1997年|p.27-32|共6页
会议地点 Boston MA(US)
作者
Misha Temkin; Ivan Chakarov;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Computationally efficient model for 2D ion implantation simulation

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