In this paper we have studied the dia and paramagentic susceptibilities of the hles in ultrathin films of magnetic materials in the presence of a parallel magnetic field o the basis of a vewly derived dispersion law for such systems. The numerical computations are performed taking Hg_(1-x)Mn_xTe and Cd_(1-x)Mn_xSe as exmaples. Both the susceptibilities increses with derceasing doping and film thickness respectively. It is important to note that not only the paramagnetic-to-diamagnetic susceptibility ratio for the present case deviates from (1/3) in coventional semiconductors, but also that is a critical regioon, where quenching of the diamagnetic occurs. The theoretical analysis is in agreement with the experimental datas as given elsewhere.
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