In this paper we have studied the dia andparamagentic susceptibilities of the holes in ultrathin films ofmagnetic materials in the presence of a parallel magnetic fieldon the basis of a newly derived dispersion law for such systems.The numerical computations are performed taking Hg_(1-x)Mn_xTe and Cd Mn Se as examples. Both thesusceptibilities increses with decreasing doping and filmthickness respectively. It is important to note that not only theparamagnetic-to-diamagnetic susceptibility ratio for the presentcase deviates from (1/3) in conventional semiconductors, butalso that is a critical region, where quenching of the diamagneticoccurs. The theoretical analysis is in agreement with theexperimental datag as given elsewhere.
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