首页> 外文会议>Symposium Proceedings vol.865; Symposium on Thin-Film Compound Semiconductor Photovoltaics; 20050329-0401; San Francisco,CA(US) >Effect of Cu Deficiency on CuIn_(1-x)Ga_xSe_2 and High-efficiency Photovoltaic Solar Cells
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Effect of Cu Deficiency on CuIn_(1-x)Ga_xSe_2 and High-efficiency Photovoltaic Solar Cells

机译:铜缺乏对CuIn_(1-x)Ga_xSe_2和高效光伏太阳能电池的影响

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摘要

We report the results of our studies on the optical and electronic structure of a wide range of polycrystalline thin-film CuIn_(1-x)Ga_xSe_2 (CIGS) alloys. The composition range includes CIS and nearly stoichiometric (slightly Cu-poor) (24.3±0.3 at.% Cu) CIGS with x values located around the value that has the best efficiency (x ~ 0.28). Relative to nearly stoichiometric CIS and CIGS, we find a reduction in the absorption strength in the spectral range 1-3 eV. This reduction can be explained in terms of the predominance of Cu 3d and Se 4p states at the valence band maximum (VBM). In addition, Cu-poor CIS and CIGS materials show an increase in bandgap because the p-d repulsive interaction in Cu-poor CIGS is less than that in nearly stoichiometric CIGS. High efficiency is discussed in terms of optical properties.
机译:我们报告了我们对多种多晶薄膜CuIn_(1-x)Ga_xSe_2(CIGS)合金的光学和电子结构的研究结果。成分范围包括CIS和接近化学计量(贫Cu)(24.3±0.3 at。%Cu)CIGS,x值位于效率最高的值附近(x〜0.28)。相对于接近化学计量的CIS和CIGS,我们发现1-3 eV光谱范围内的吸收强度降低。可以根据价带最大值(VBM)处Cu 3d和Se 4p的优势来解释这种减少。此外,贫铜的CIS和CIGS材料显示出带隙增加,这是因为贫铜的CIGS中的p-d排斥相互作用小于化学计量的CIGS。关于光学性能,讨论了高效率。

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