Formation mechanism of negative fixed charge in glass at lead glass/silicon interface

摘要

The physical origins of egative fixed charges at the lead glass/silicon interface have been studied. It was found that a thin p-type region is present on the n-type substrate in the PbO-SiO_2-Al_2O_3 glass/silicon system frm the punch-through voltage, pinch-off voltage, and SIMS analysis. A new model of the negative fixed charge was proposed from the MIS structure with the surface pn junction.