首页> 外文会议>Symposium on Polycrystalline Metal and Magnetic Thin Films held April 5-8, 1999, San Francisco, California, U.S.A. >Structure, electrical and magnetic properties of thin films of La_(1-x)M_xMnO_3 on Si
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Structure, electrical and magnetic properties of thin films of La_(1-x)M_xMnO_3 on Si

机译:Si上La_(1-x)M_xMnO_3薄膜的结构,电磁性能

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摘要

Thin films of lanthanum manganates doped with Ca~(2+), Sr~(2+), Ba~(2+) and Pb~(2+) have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La_(0.8)Al_(0.2)O_3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transiton temperature.
机译:掺杂有Ca〜(2 +),Sr〜(2 +),Ba〜(2+)和Pb〜(2+)的锰酸镧薄膜已沉积在Si(100)衬底上,其电和磁性能为关于掺杂剂的组成,结构和性质的讨论。采用了YSZ和La_(0.8)Al_(0.2)O_3的缓冲层,研究了它们对材料的影响。在某些薄膜中发现了有趣的磁传输特性,在这些薄膜中,绝缘体-金属的转变温度与铁磁转变温度之间存在很大差异。

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