Nanodevicc fabrication on hydrogenated diamond surface using atomic force microscope

摘要

Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).