首页> 外文会议>Symposium on Materials Science of Microelectromechanical Systems( MEMS) Devices Ⅲ Nov 27-28, 2000, Boston, Massachusetts, U.S.A. >Fabrication of MEMS Components Based on Ultrananocrystalline Diamond Thin Films and Characterization of Mechanical Properties
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Fabrication of MEMS Components Based on Ultrananocrystalline Diamond Thin Films and Characterization of Mechanical Properties

机译:基于超纳米晶金刚石薄膜的MEMS元件的制备及力学性能表征

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摘要

The mechanical, thermal, chemical, and tribological properties of diamond make it an ideal material for the fabrication of MEMS components. However, conventional CVD diamond deposition methods result in either a coarse-grained pure diamond structure that prevents high-resolution patterning, or in a fine-grained diamond film with a significant amount of intergranular non-diamond carbon. At Argonne National Laboratory, we are able to produce phase-pure Ultrananocrystalline diamond (UNCD) films for the fabrication of MEMS components. UNCD is grown by microwave plasma CVD using C_(60)-Ar or CH_4-Ar plasmas, resulting in films that have 3-5 nm grain size, are 10-20 times smoother than conventionally grown diamond films, and can have mechanical properties similar to that of single crystal diamond. We used lithographic patterning, lift-off, and etching, in conjunction with the capability for growing UNCD on SiO_2 to fabricate 2-D and 3-D UNCD-MEMS structures. We have performed initial characterization of mechanical properties by using nanoindentation and in-situ TEM indentor techniques. The values of Hardness (~88 GPa) and Young's modulus (~ 864 GPa) measured are very close to those of single crystal diamond (100 GPa and 1000 GPa respectively). The results show that UNCD is a promising material for future high performance MEMS devices.
机译:金刚石的机械,热,化学和摩擦学特性使其成为制造MEMS组件的理想材料。但是,常规的CVD金刚石沉积方法会导致粗晶粒的纯金刚石结构(阻止高分辨率图案化),或者导致具有大量晶间非金刚石碳的细晶粒金刚石膜。在Argonne国家实验室,我们能够生产用于制造MEMS组件的纯相超纳米晶金刚石(UNCD)膜。通过使用C_(60)-Ar或CH_4-Ar等离子体的微波等离子体CVD生长UNCD,得到的膜具有3-5 nm的粒径,比常规生长的金刚石膜光滑10-20倍,并且可以具有相似的机械性能到单晶钻石。我们使用了光刻图案化,剥离和蚀刻技术,以及在SiO_2上生长UNCD的能力,以制造2-D和3-D UNCD-MEMS结构。我们已经通过使用纳米压痕和原位TEM压痕技术对机械性能进行了初步表征。测得的硬度(〜88 GPa)和杨氏模量(〜864 GPa)非常接近单晶金刚石(分别为100 GPa和1000 GPa)。结果表明,UNCD是未来高性能MEMS器件的有前途的材料。

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