首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >The control of gold nanocluster sizes in dielectric thin films via ion beam assisted deposition
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The control of gold nanocluster sizes in dielectric thin films via ion beam assisted deposition

机译:通过离子束辅助沉积控制介电薄膜中金纳米簇的大小

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Gold nanoclusters in silica were deposited by co-evaporation of gold and silica in the presence of an argon ion beam. Gold clusters are formed in-situ during the deposition process. The damage induced by the ion beam controls the cluster size, and clusters with a diameter between 15 - 30 A are obtained. The Au clusters show a highly compressive strain as measured by X-ray diffraction and lattice parameters up to 3.5 % smaller than in bulk gold are observed. Post-deposition annealing in air leads to cluster growth and release of the strain. Annealing near the melting point of gold causes the clusters to grow exponentially up to 180 A. This is accompanied by a blue shift of the Mie absorption peak. Furthermore the formation of a superlattiee was observed by TEM and confirmed by small angle XRD measurements.
机译:通过在氩离子束的存在下共蒸发金和二氧化硅来沉积二氧化硅中的金纳米团簇。金团簇在沉积过程中原位形成。离子束引起的损伤控制簇的大小,并获得直径在15-30 A之间的簇。通过X射线衍射测量,金簇显示出高压缩应变,并且观察到的晶格参数比散装金小多达3.5%。空气中的沉积后退火导致簇生长和应变释放。在金的熔点附近退火会导致簇以指数方式增长到180A。这伴随着Mie吸收峰的蓝移。此外,通过TEM观察到超晶格的形成,并通过小角度XRD测量证实。

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