A study of band alignment in GaAs/GaInP(partially ordered) heterostructures with high pressure

摘要

In this paper we review the use of high pressure techniques to investigate the optical properties of partially ordered GaInP epitaxial layers grown on GaAs substrates. In particular, we demonstrate the ability of high pressure to modify the band alignment at the GaInP/GaAs interface and hence to alter the optical properties of heterostructures fabricated from partially ordered GaInP on GaAs.